Critical points of strained Si1-yCy layers on Si(001)

Solid State Phenomena

Volumn 47-48, Issue , 1996, Pages 523-528

  Kissinger, W ^a   Weidner, M ^a   Osten, H J ^a   Eichler, M ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEFECTS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DEVICE MANUFACTURE; SPECTROSCOPIC ELLIPSOMETRY;

CARBON CONTENT; DIELECTRIC FUNCTIONS; DIRECT TRANSITION; EFFECT OF CARBONS; ELECTROREFLECTANCE SPECTROSCOPIES; LINE BROADENING; POINT ENERGIES; SECOND DERIVATIVES;

SI-GE ALLOYS;

EID: 17544371809     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article

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