Polycrystalline semiconductors: Structure-property relationships

Solid State Phenomena

Volumn 51-52, Issue , 1996, Pages 105-116

  Smith, D A ^a   Nichols, C S ^a  

^a Lehigh University   (United States)

Author keywords

Breakdown; Grain Boundary Barriers; Grain Growth; Majority Carrier Lifetime; Microstructure Evolution; Minority Carrier Lifetime; Percolation; Varistor

Indexed keywords

EID: 17544369531     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.51-52.105     Document Type: Article

References (6)

1. D.A. Smith and C.S. Nichols, Mat. Sci. & Eng. A166, 29 (1993).
2. Y. Seto, J.Appl. Phys. 46, 5247 (1975)
3. T. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic Publishers, Boston, 1988) pp 155-202.
4. T. Kamins, Polycrystalline Silicon for Integrated Circuit Applications (Kluwer Academic Publishers, Boston, 1988) p49.
5. M. Hamasaki, T. Adachi,S. Wakayama and M. Kikuchi, J. Appl. Phys. 49, 3987 (1978)
6. O. Kubacnevski and C.B. Alcock, Metallurgical Thermochemistry, Fifth Edition, (Pergamon, Oxford,1979) p221.