Experimental determination of hall factor for hydrogenated in-situ phosphorus doped polysilicon films

Solid State Phenomena

Volumn 51-52, Issue , 1996, Pages 379-384

  Le Bihan, F ^a   Fortin, B ^a   Lhermite, H ^a   Bonnaud, O ^a   Briand, D ^a  

^a CNRS   (France)

Author keywords

Carrier Concentration; Hall Effect; Hall Factor; Thin Film Transistors

Indexed keywords

EID: 17544369152     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.51-52.379     Document Type: Article

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4. M. Ada-Hanifi, J. Sicart, J. M. Dusseau and J. L. Robert, J. Appl. Phys. 62, 1869 (1987).