Hole-concentration dependence of electrical resistivity in the (Bi, Pb)2(Sr, La)2CuO6+δ quantitative evaluation with angle-resolved photoemission spectroscopy

Journal of Electron Spectroscopy and Related Phenomena

Volumn 144-147, Issue , 2005, Pages 1249-1252

  Kondo, Takeshi ^a   Takeuchi, Tsunehiro ^a   Yokoya, Takayoshi ^b   Tsuda, Syunsuke ^b   Shin, Shik ^b   Mizutani, Uichiro ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

ARPES; Bi2201; Cuprate; Electrical resistivity; High Tc; Superconductor

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); EMISSION SPECTROSCOPY; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; HOLE MOBILITY; OXIDE SUPERCONDUCTORS; PHONONS; PHOTOEMISSION; RELAXATION PROCESSES; SINGLE CRYSTALS;

ANGLE-RESOLVED PHOTOEMISSION SPECTROSCOPY (ARPES); BI2201; FLOATING-ZONE (FZ); PHONON SCATTERING;

ELECTRIC RESISTANCE;

EID: 17544366047     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2005.01.198     Document Type: Article

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