The density of states in the mobility gap of amorphous hydrogenated silicon doped with erbium

Semiconductors

Volumn 39, Issue 3, 2005, Pages 351-353

  Biryukov, A V ^a   Kazanskii A G ^a   Terukov, E I ^b   Khabarova, K Yu ^a  

^a MOSCOW STATE UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 17544365172     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1882800     Document Type: Article

References (10)

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