Quantum chemical study on p-doping effect of F-terminated silicon surface reaction with silane

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 54-60

  Tachibana, Akitomo ^a   Sakata, Ken ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

Bonding structure calculation; F effect; p doping

Indexed keywords

CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; COMPUTATIONAL METHODS; FLUORINE; MOLECULAR STRUCTURE; REACTION KINETICS; SEMICONDUCTOR DOPING; SILANES; SURFACE PHENOMENA;

QUANTUM CHEMISTRY;

SEMICONDUCTING SILICON;

EID: 17444447287     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80051-7     Document Type: Article

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