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Volumn 41-42, Issue , 1996, Pages 171-181
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Recombination lifetime studies of silicon spheres
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTAL IMPURITIES;
ELECTRIC PROPERTIES;
ELECTRON BEAMS;
ETCHING;
FABRICATION;
MELTING;
PARTICLE BEAM INJECTION;
PHOTOCONDUCTIVITY;
RECRYSTALLIZATION (METALLURGY);
SURFACES;
ELECTRON HOLE RECOMBINATION;
ELECTRONIC GRADE SILICON;
HIGH LEVEL INJECTION;
METALLURGICAL GRADE SILICON;
MINORITY CARRIER LIFETIME;
RADIOFREQUENCY PHOTOCONDUCTIVE DECAY TECHNIQUE;
RECOMBINATION LIFETIME;
SILICON SOLAR CELLS;
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EID: 17444443178
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/0927-0248(95)00130-1 Document Type: Article |
Times cited : (6)
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References (15)
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