Steps toward a capacitance standard based on single-electron counting at PTB

IEEE Transactions on Instrumentation and Measurement

Volumn 54, Issue 2, 2005, Pages 666-669

  Scherer, Hansjörg ^a   Lotkhov, Sergey V ^a   Willenberg, Gerd Dietmar ^a   Zorin, Alexander B ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

Capacitance; Charge transfer; Cryogenic electronics; Current; Quantization; Thin film devices; Tunnel transistors; Tunneling

Indexed keywords

CAPACITORS; CHARGE TRANSFER; CRYOGENIC EQUIPMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTROMETERS; ELECTRON TUNNELING; ELECTRONS; JOSEPHSON JUNCTION DEVICES; THIN FILM DEVICES; TRANSISTORS; VOLTAGE MEASUREMENT;

CAPACITANCE STANDARD; CRYOGENIC ELECTRONICS; SINGLE ELECTRON COUNTING; TUNNEL TRANSISTORS;

CAPACITANCE;

EID: 17444417020     PISSN: 00189456     EISSN: None     Source Type: Journal    
DOI: 10.1109/TIM.2004.843075     Document Type: Article

References (6)

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