Electronic structure of the interface of GaAs(1 0 0) with MgO overlayer grown by thermal evaporation of Mg in O2 under UHV

Journal of Electron Spectroscopy and Related Phenomena

Volumn 144-147, Issue , 2005, Pages 385-388

  Xu, Faqiang ^a   Pan, Haibin ^a   Zhang, Wenhua ^a   Wang, Guodong ^a   Li, Zongmu ^a   Xu, Pengshou ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

GaAs(1 0 0); MgO; Photoemission; Surface and interface

Indexed keywords

DEPOSITION; DIFFUSION IN SOLIDS; ELECTRONIC STRUCTURE; EVAPORATION; LIGHT EMISSION; MAGNESIA; OXYGEN; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS;

INTERFACIAL LAYERS; POLISHED WAFERS; SPINTRONICS; SURFACE AND INTERFACE;

INTERFACES (MATERIALS);

EID: 17444399361     PISSN: 03682048     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.elspec.2005.01.240     Document Type: Conference Paper

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