Precessional direct-write switching in micrometer-sized magnetic tunnel junctions

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Maunoury, C ^a   Devolder, T ^a   Lim, C K ^a,c   Crozat, P ^a   Chappert, C ^a   Wecker, J ^b   Bar L ^b  

^a UNIV PARIS SUD   (France)

^b SIEMENS AG   (Germany)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC RANDOM ACCESS MEMORIES (MRAM); MAGNETIC TUNNEL JUNCTIONS (MTJ); PULSE DURATIONS; TOGGLE SWITCHING;

APPROXIMATION THEORY; HYSTERESIS; MAGNETIC FIELDS; MAGNETIZATION; RANDOM ACCESS STORAGE; SWITCHING; SYNCHROTRON RADIATION;

TUNNEL JUNCTIONS;

EID: 17444390054     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1881795     Document Type: Article

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