Band gap energy and valance band splitting of photocurrent behaviour for AgInS2 epilayers grown by hot wall epitaxy

Journal of Ceramic Processing Research

Volumn 6, Issue 1, 2005, Pages 20-24

  Baek, Seungnam ^a   Hong, Kwangjoon ^a  

^a Chosun University   (South Korea)

Author keywords

AgInS2; Energy band gap; Hot wall epitaxy; Photocurrent; Valence band splitting

Indexed keywords

INDIUM; SILVER DERIVATIVE; SULFUR DERIVATIVE;

ARTICLE; CRYSTAL STRUCTURE; ENERGY TRANSFER; EVALUATION; PHOTOCHEMISTRY; QUALITATIVE ANALYSIS; ROOM TEMPERATURE;

EID: 17444379324     PISSN: 12299162     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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