Contribution of the metalSi O2 interface potential to photoinduced switching in molecular single-electron tunneling junctions

Journal of Applied Physics

Volumn 97, Issue 7, 2005, Pages

  Noguchi, Yutaka ^a   Kubota, Tohru ^a   Mashiko, Shinro ^a   Wakayama, Yutaka ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATIC POTENTIALS; MOLECULAR ENERGY STATES; RELAXATION TIME; SINGLE-ELECTRON TUNNELING CONDUCTION;

ELECTRIC INSULATORS; ELECTRIC SPACE CHARGE; ELECTRODES; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; ENERGY GAP; INTERFACES (MATERIALS); PORPHYRINS; SILICA; SWITCHING;

TUNNEL JUNCTIONS;

EID: 17444369753     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1862319     Document Type: Article

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