Electrical characterization of visible emitting electroluminescent schottky diodes based on n-type porous silicon and on highly doped n-type porous polysilicon

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 973-976

  Lazarouk, S ^a   Bondarenko, V ^a   Jaguiro, P ^a   Lacquaniti, N ^b   La Monica, S ^b   Maiello, G ^b   Masini, G ^b   Ferrari, A ^b  

^a BELARUSIAN STATE UNIVERSITY OF INFORMATICS AND RADIOELECTRONICS   (Belarus)

^b SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRIC VARIABLES MEASUREMENT; ELECTROCHEMISTRY; ELECTROLUMINESCENCE; ETCHING; FABRICATION; LIGHT EMITTING DIODES; POROUS SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPY; SUBSTRATES;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLYSILICON;

SCHOTTKY BARRIER DIODES;

EID: 17344395316     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00099-3     Document Type: Article

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