Dual beam and transient infrared stimulated photoconductivity in hydrogenated amorphous silicon at 4.2 K

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 153-156

  Fritzsche, H ^a   Heck, S ^a   Stradins, P ^a  

^a UNIVERSITY OF CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; ENERGY GAP; FOURIER TRANSFORMS; INFRARED RADIATION; OPTICAL VARIABLES MEASUREMENT; PHOTOCONDUCTIVITY;

ABSORPTION CROSS SECTION; BAND GAP BIAS LIGHT; DUAL BEAM PHOTOCONDUCTIVITY; HYDROGENATED AMORPHOUS SILICON; RECOMBINATION VOLUME; TAIL STATE ELECTRONS;

AMORPHOUS SILICON;

EID: 17344393342     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00668-0     Document Type: Article

References (6)

1. B.I. Shklovskii, H. Fritzsche and S.D. Baranovskii, in: Transport, Correlation and Structural Defects, ed. H. Fritzsche (World Scientific, Singapore, 1990) p. 161.
2. H.-P. Vollmar, P. Botzler, T.-U. Sachse and R. Bindemann, J. Non-Cryst. Solids 164-166 (1993) 603.
3. R.A, Street and D.K. Biegelsen, Solid State Commun. 44 (1982) 501.
4. F. Boulitrop, in: Optical Effects in Amorph. Semicond., eds. P.C. Taylor and S.G. Bishop, AIP Conf. 120 (1984) 178.
5. M.-Q. Tran, P. Stradins and H. Fritzsche, Mater. Res. Symp. Proc. 336 (1994) 431.
6. S. Heck, P. Stradins and H. Fritzsche, Mat. Res. Symp. Proc. 377 (1995) 485.