OMCVD TiN diffusion barrier for copper contact and via/ interconnects structures

Microelectronic Engineering

Volumn 37-38, Issue , 1997, Pages 197-203

  Marcadal, C ^a,c   Richard, E ^b   Torres, J ^b   Palleau, J ^b   Ulmer, L ^a   Perroud, L ^a   Piaguet, J ^a   Rolland, G ^a  

^a CEA LETI   (France)

^b ORANGE LABS   (France)

^c Applied Materials   (France)

Author keywords

Copper barrier; Interconnects; OMCVD; TiN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; PLASMA APPLICATIONS; PYROLYSIS; THIN FILMS; TITANIUM NITRIDE;

DIFFUSION BARRIERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 17344378763     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00112-3     Document Type: Article

References (4)

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3. A. Mesli, T. Heser, Phys. Rev. B 45(20) (1992) 11632.
4. F. Braud, J. Torres, J. Palleau, J.L. Mermet, C. Marcadal, E. Richard, Proceedings 1996 13th VMIC (1996) 174.