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Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 592-595

Time-of-flight and post-transit spectroscopy of a-Si1-xCx:H alloys

(4) Eliat, A a Yan, B a Adriaenssens, G J a Bezemer, J b

a UNIVERSITY OF LEUVEN (Belgium)

b UTRECHT UNIVERSITY (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CAPACITANCE; CARBON; CHEMICAL VAPOR DEPOSITION; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; HYDROGENATION; PHOTOCONDUCTIVITY; PLASMA APPLICATIONS; SCHOTTKY BARRIER DIODES; SPECTROSCOPY;

CARBON CONCENTRATION; CHARGE TRAPPING; HYDROGENATED AMORPHOUS ALLOYS; SCHOTTKY DIODES CLEAR EMISSION; STANDARD SPACE CHARGE LIMITED CURRENT; TIME OF FLIGHT AND POST TRANSIT SPECTROSCOPY;

AMORPHOUS ALLOYS;

EID: 17144472522 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/0022-3093(95)00769-5 Document Type: Article

Times cited : (5)

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