Photocurrent response times in amorphous silicon thin film transistors

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 234-237

  Schwarz, R ^a   Grebner, S ^a   Popovic, P ^a   Wang, F ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER CONCENTRATION; FERMI LEVEL; GATES (TRANSISTOR); HELIUM NEON LASERS; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; STRAY LIGHT;

GATE VOLTAGE; LIGHT INTENSITY; PHOTOCURRENT DECAY;

THIN FILM TRANSISTORS;

EID: 17144470364     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00772-5     Document Type: Article

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