The oxidation behaviors of MoSi 2 on (111)Si

Applied Surface Science

Volumn 113-114, Issue , 1997, Pages 600-604

  Hung, S F ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Molybdenum silicide; Oxidation behaviors; Silicon

Indexed keywords

ACTIVATION ENERGY; CRYSTAL DEFECTS; OXIDES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA; TRANSMISSION ELECTRON MICROSCOPY; VECTORS;

BURGERS VECTORS; MOLYBDENUM SILICIDE;

OXIDATION;

EID: 17144468802     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00799-4     Document Type: Article

References (17)

1. T. Inoue and K. Koike, Appl. Phys. Lett. 33 (1978) 826.
2. S. Zirinsky, W. Hammer, F.M. d'Heurle and J.E.E. Baglin, Appl. Phys. Lett. 33 (1978) 76.
3. F. Mohammadi, K.C. Saraswat and J.D. Meindl, Appl. Phys. Lett. 35 (1979) 529.
4. M. Bartur and M.A. Nicolet, Appl. Phys. Lett. 40 (1982) 175.
5. S.P. Murarka, D.B. Fraser, W.S. Lindenberger and A.K. Sinha, J. Appl. Phys. 51 (1980) 3241.
6. F.M. d'Heurle, E.A. Irene and C.Y. Ting, Appl. Phys. Lett. 42 (1983) 361.
7. J.R. Chen, Y.C. Liu and S.D. Chu, J. Electron. Mater. 11 (1982) 355.
8. T. Sandwick and K. Rajan, J, Electron. Mater. 19 (1990) 1193.
9. A.S. Wakita, T.W. Sigmon and J.F. Gibbons, J. Appl. Phys. 54 (1983) 2711.
10. G.J. Haung and L.J. Chen, J. Appl. Phys. 72 (1992) 3143.
11. G.J. Haung and L.J. Chen, J. Appl. Phys. 74 (1993) 1001.
12. G.J. Haung and L.J. Chen, J. Appl. Phys. 76 (1994) 865.
13. A.S. Wakita, T.W. Sigmon and J.F. Gibbons, Appl. Phys. Lett. 45 (1984) 140.
14. L.M. Mack, A. Reisman and P.R. Bhattacharya, J. Electrochem. Soc. 136 (1989) 3433.
15. J.E.E. Baglin, F.M. d'Heurle and C.S. Petersson, J. Appl. Phys. 54 (1983) 1849.
16. B.E. Deal and A.S. Grove, J. Appl. Phys. 36 (1965) 3770.
17. L.N. Lie, W.A. Tiller and K.C. Saraswat, J. Appl. Phys. 56 (1984) 2127.