Influence of erbium doping on structure and optical properties of the InGaAs/GaAs superlattices

Materials Science Forum

Volumn 258-263, Issue 9993, 1997, Pages 1625-1630

  Gerchikov, L G ^a   Masterov, V F ^a   Stepanova, T R ^a   Gibbs, H ^b   Khitrova, G ^b   Faleev, N N ^c  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b UNIVERSITY OF ARIZONA   (United States)

^c RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

Energy level; Erbium; Optical spectrum; Superlattice

Indexed keywords

DISLOCATIONS (CRYSTALS); ERBIUM; LIGHT ABSORPTION; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING;

INDIUM GALLIUM ARSENIDE;

SEMICONDUCTOR SUPERLATTICES;

EID: 17144462524     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.1625     Document Type: Article

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