Distribution of lifetime of photoluminescence in band-edge modulated a-Si1-x Nx:H films

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 255-258

  Ogihara, C ^a   Ishimura, H ^a   Kinoshita, T ^a   Ikeda, K ^a   Morigaki, K ^b  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; EXCITONS; LIGHT MODULATION; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS; SPECTROSCOPY; THERMAL EFFECTS;

FREQUENCY RESOLVED SPECTROSCOPY; LIFETIME DISTRIBUTION; RECOMBINATION PROCESS;

SEMICONDUCTING FILMS;

EID: 17144456760     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00703-2     Document Type: Article

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