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Volumn 264-268, Issue pt 1, 1998, Pages 203-206
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Study of initial stage of SiC growth on Si(100) surface by XPS, RHEED and SEM
a
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Author keywords
[No Author keywords available]
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Indexed keywords
MORPHOLOGY;
REACTION KINETICS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
SURFACE PHENOMENA;
SURFACE STRUCTURE;
X RAY PHOTOELECTRON SPECTROSCOPY;
SURFACE RECONSTRUCTION;
SILICON CARBIDE;
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EID: 17144456095
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.264-268.203 Document Type: Article |
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Times cited : (2)
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References (2)
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