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Volumn 353-356, Issue , 2001, Pages 409-412
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Epitaxial growth and properties of SiC layers grown on α-SiC(0001) by solid-source MBE: a photoluminescence study
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Author keywords
[No Author keywords available]
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Indexed keywords
BORON;
DOPING (ADDITIVES);
EPITAXIAL GROWTH;
EXCITONS;
LIGHT EMISSION;
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
CARBON DIVACANCY;
CHEMICAL POTENTIAL;
SILICON CARBIDE;
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EID: 17144452272
PISSN: 02555476
EISSN: None
Source Type: Conference Proceeding
DOI: 10.4028/www.scientific.net/msf.353-356.409 Document Type: Article |
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Times cited : (3)
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References (14)
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