Crystal growth of 15R-SiC and various polytype substrates

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 69-72

  Nishiguchi, T ^a   Shimizu, T ^a   Sasaki, M ^a   Ohshima, S ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; ETCHING; OPTICAL MICROSCOPY; POTASSIUM COMPOUNDS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STACKING FAULTS; SUBLIMATION; SUBSTRATES; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

POLYMORPHIC TRANSFORMATION; POLYTYPE SUBSTRATES; QUARTZ TUBE REACTOR; SUBLIMATION GROWTH;

SILICON CARBIDE;

EID: 17144445844     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.69     Document Type: Article

References (5)

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