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Volumn 119, Issue 1, 2005, Pages 28-37

Performance and package effect of a novel piezoresistive pressure sensor fabricated by front-side etching technology

Author keywords

Back side etching; Etching via; Finite element method; Front side etching; Package; Piezoresistive pressure sensor

Indexed keywords

ETCHING; SENSITIVITY ANALYSIS; SHEAR STRESS; SILICON; STRESS ANALYSIS; THERMAL STRESS; THERMOANALYSIS;

EID: 17144393732     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2004.08.013     Document Type: Article
Times cited : (59)

References (10)
  • 1
    • 34249846476 scopus 로고
    • Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects
    • W.G. Pfann, and R.N. Thurston Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects J. Appl. Phys. 32 1961 2008 2018
    • (1961) J. Appl. Phys. , vol.32 , pp. 2008-2018
    • Pfann, W.G.1    Thurston, R.N.2
  • 2
    • 0019916789 scopus 로고
    • Graphical representation of the piezoresistance coefficient in silicon
    • Y. Kanda Graphical representation of the piezoresistance coefficient in silicon IEEE Trans. Electron Devices ED-29 1 1982 64 70
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.1 , pp. 64-70
    • Kanda, Y.1
  • 3
    • 0032092118 scopus 로고    scopus 로고
    • Measurement of package-induced stress and thermal zero shift in transfer molded silicon piezoresistive pressure sensor
    • J.B. Nyseather, A. Larsen, B. Liverod, and P. Ohlckers Measurement of package-induced stress and thermal zero shift in transfer molded silicon piezoresistive pressure sensor J. Micromech. Microeng. 8 1998 168 171
    • (1998) J. Micromech. Microeng. , vol.8 , pp. 168-171
    • Nyseather, J.B.1    Larsen, A.2    Liverod, B.3    Ohlckers, P.4
  • 5
    • 0031141301 scopus 로고    scopus 로고
    • Simulation of thermally induced package effects with regard to piezoresistive pressure sensors
    • F. Schilling, W. Langheinrich, K. Weiblen, and D. Arand Simulation of thermally induced package effects with regard to piezoresistive pressure sensors Sens. Actuat. A 60 1997 37 39
    • (1997) Sens. Actuat. A , vol.60 , pp. 37-39
    • Schilling, F.1    Langheinrich, W.2    Weiblen, K.3    Arand, D.4
  • 8
    • 17144367151 scopus 로고    scopus 로고
    • Silicon based micro pressure sensing device and the fabrication method thereof, Taiwan Patent 500 916
    • Silicon based micro pressure sensing device and the fabrication method thereof, Taiwan Patent 500 916 (2002).
    • (2002)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.