Effects of hydrostatic pressure and temperature on electronic band parameters in Al x Ga1-x As

Czechoslovak Journal of Physics

Volumn 55, Issue 1, 2005, Pages 65-72

  Boucenna, M ^a   Bouarissa, N ^a,b  

^a UNIVERSITY OF M'SILA   (Algeria)

^b KING KHALID UNIVERSITY   (Saudi Arabia)

Author keywords

Electronic structure; Pressure effect; Temperature; Ternary semiconductors

Indexed keywords

EID: 17144392183     PISSN: 00114626     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10582-005-0008-z     Document Type: Article

References (29)

1. I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan: J. Appl. Phys. 89 (2001) 5815.
2. S. Adachi, Ed.: Properties of Aluminum Gallium Arsenide, INSPEC, Stevenage, Herts., UK, 1993.
3. M. El-Allali, C.B. Sorensen, E. Veje, and P. Tidemand-Petersson: Phys. Rev. B 48 (1993) 4398.
4. H.J. Lee, L.Y. Juravel, J.C. Woolley, and A.J. Spring Thorpe: Phys. Rev. B 21 (1980) 659.
5. J.L. Aubel, U.K. Reddy, S. Sundaram, W.T. Beard, and J. Comas: J. Appl. Phys. 58 (1985) 495.
6. J.M. Wrobel, L.C. Bassett, J.L. Aubel, S. Sundaram, J.L. Davis, and J. Comas: J. Vac. Sci. Technol. 5 (1987) 1464.
7. C. Bosio, J.L. Staehli, M. Guzzi, G. Burri, and R.A. Logan: Phys. Rev. B 38 (1988) 3263.
8. N. Bouarissa: Mater. Chem. Phys. 72 (2001) 387.
9. See for example, M.L. Cohen and J.R. Chelikowsky: in Electronic Structure and Optical Properties of Semiconductors, (Eds. M. Cardona, P. Fulge, K. von Klitzing, and H.-J. Queisser), Springer-Verlag, Berlin-Heidelberg, 1988.
10. T. Kobayasi and H. Nara: Bull. Coll. Med. Sci. (Tohoku Univ.) 2 (1993) 7.
11. N. Bouarissa and H. Aourag: Phys. Status Solidi B 199 (1997) 403.
12. S. Adachi: J. Appl. Phys. 61 (1987) 4869 and references cited therein.
13. D.E. Aspnes, C.G. Olson, and D.W. Lynch: Phys. Rev. Lett. 37 (1976) 766.
14. M. Levinshtein, S. Rumyantsev, and M. Shur, Eds.: Handbook Series on Semiconductor Parameters, Vol. 1, World Scientific, Singapore, 1996; Vol. 2, World Scientific, Singapore, 1999.
15. M. Levinshtein, S. Rumyantsev, and M. Shur, Eds.: Handbook Series on Semiconductor Parameters, Vol. 1, World Scientific, Singapore, 1996; Vol. 2, World Scientific, Singapore, 1999.
16. F.D. Murnaghan: Proc. Natl. Acad. Sci. U.S.A. 30 (1944) 244.
17. A. Mujica, P. Rodriguez-Hernandez, S. Rdescu, R.J. Needs, and A. Munoz: Phys. Status Solidi B 211 (1999) 39.
18. O. Madelung, Ed.: Semiconductors - Basic Data, Springer, Berlin, 1996.
19. S.J. Lee, T.S. Kwon, K. Nahm, and C.K. Kim: J. Phys.: Condens. Matter 2 (1990) 3253.
20. N. Bouarissa: Phys. Lett. A 245 (1998) 285.
21. L. Vegard: Z. Phys. 5 (1921) 17.
22. A.K. Saxena: Phys. Status Solidi B 105 (1981) 777.
23. H.C. Casey, Jr. and M.B. Panish: Heterostructure Lasers, Part A: Fundamental Principles, Academic, New York, 1978, Chaps. 4 and 5.
24. J.C.M. Henning, J.P.M. Ansems, and P.J. Roksnoer: J. Phys. C 19 (1986) L335.
25. L. Pavesi and M. Guzzi: J. Appl. Phys. 75 (1994) 4779.
26. M. Guzzi, E. Grilli, S. Oggioni, J.L. Staehli, C. Bosio, and L. Pavesi: Phys. Rev. B 45 (1992) 10951.
27. K. Shim, D.N. Talwar, and H.-J. Moh: Solid State Commun. 97 (1996) 315:
28. N. Bouarissa and H. Aourag: Infrared Phys. Technol. 36 (1995) 973.
29. A.K. Saxena: J. Phys. C 13 (1980) 4323.