Observation of recombination enhanced defect annealing in 4H-SiC

Applied Physics Letters

Volumn 86, Issue 9, 2005, Pages 1-3

  Storasta, L ^a   Carlsson, F H C ^a   Bergman, J P ^a   Janzn E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CONCENTRATION (PROCESS); DEFECTS; ELECTRON IRRADIATION; LASER BEAM EFFECTS; LIGHTING; PHOTOLUMINESCENCE; THERMAL EFFECTS; TRANSIENTS;

CAPACITANCE TRANSIENT MEASUREMENTS; DEFECT ANNEALING; PIN DIODES; VIBRATIONAL ENERGY;

SILICON CARBIDE;

EID: 17144384764     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1811381     Document Type: Article

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