Hall effect in the doped Kondo insulator (Ce1-xLax)3Bi4Pt3

Physica B: Condensed Matter

Volumn 281-282, Issue , 2000, Pages 262-263

  Pietrus, T ^a   Von Lohneysen H ^a   Steinbach, B ^a   Muller Vogt G ^a  

^a UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER MOBILITY; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC INSULATING MATERIALS; HALL EFFECT; PHASE TRANSITIONS; SINGLE CRYSTALS;

KONDO INSULATORS;

CERIUM COMPOUNDS;

EID: 17044460310     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)01231-4     Document Type: Article

References (9)

1. M.F. Hundely et al., Phys. Rev. B 42 (1990) 6842.
2. M.F. Hundley et al., Phys. Rev. B 50 (1994) 18142.
3. Z.-Z. Li et al., Phys. Rev. B 50 (1994) 11332.
4. J.W. Rasul, Phys. Rev. B 51 (1995) 2576.
5. P. Schlottmann, Phys. Rev. B 54 (1996) 12324.
6. P.C. Canfield, Z. Fisk, Philos. Mag. 65 (1992) 1117.
7. J.D. Thompson et al., in: G. Oomi et al. (Eds.), Thermal and Transport Properties of f-Electron Systems, Plenum, New York, 1993, p. 35.
8. M.F. Hundley et al., Physica B 199&200 (1994) 443.
9. B.I. Shklovskii, A.L. Efros Electronic Properties of Doped Semiconductors, Springer, Berlin, 1984.