Ultra-low leakage 0.16 μm CMOS for low-standby power applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 671-674

  Wu, C C ^a   Diaz, C H ^a   Lin, B L ^a   Chang, S Z ^a   Wang, C C ^a   Liaw, J J ^a   Wang, C H ^a   Young, K K ^a   Lee, K H ^a   Liew, B K ^a   Sun, J Y C ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLICATION SPECIFIC INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT MEASUREMENT; ELECTRIC POWER SUPPLIES TO APPARATUS; ETCHING; LEAKAGE CURRENTS; MOSFET DEVICES; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS;

COBALT SALICIDE PROCESS; GATE INDUCED DRAIN LEAKAGE; LOW JUNCTION LEAKAGE; POLYSILICON REOXIDATION; ULTRA LOW POWER;

INTEGRATED CIRCUIT LAYOUT;

EID: 17044453494     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)