ZnGeP2 growth: Melt non-stoichiometry and defect substructure

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 III, 2002, Pages 2000-2004

  Verozubova, G A ^a   Gribenyukov, A I ^a   Korotkova, V V ^a   Vere, A W ^b   Flynn, C J ^b  

^a Inst for Optical Monitoring   (Russian Federation)

^b DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

A1. Crystal structure; A1. Defects; A1. Optical microscopy; A2. Growth from melt; B1. Phosphides; B2. Nonlinear optical materials; B2. Semiconducting ternary compounds

Indexed keywords

COMPOSITION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); NONLINEAR OPTICS; OPTICAL MATERIALS; OPTICAL MICROSCOPY; OSCILLATIONS; PRECIPITATION (CHEMICAL); SEMICONDUCTING ZINC COMPOUNDS; STOICHIOMETRY;

OPTICAL LOSSES;

CRYSTAL GROWTH FROM MELT;

EID: 17044446436     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02303-X     Document Type: Article

References (5)

1. Native defects in the ternary chalcopyrites