High output power GaAs-based vertical external cavity surface emitting lasers achieved by AuIn2 solid liquid inter diffusion bonding

Proceedings - Electrochemical Society

Volumn 6, Issue , 2004, Pages 177-181

  Dion, J ^a,b   Sagnes, I ^a   Strassner, M ^a   Jacquemet, M ^c   Georges, P ^c   Garnache, A ^d  

^a CNRS   (France)

^b STMICROELECTRONICS   (France)

^c INSTITUT D'OPTIQUE GRADUATE SCHOOL   (France)

^d UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; GALLIUM COMPOUNDS; GOLD COMPOUNDS; HEAT LOSSES; OPTOELECTRONIC DEVICES; SOLID STATE LASERS; SUBSTRATES; THERMAL CONDUCTIVITY;

BONDING TEMPERATURE; CARRIER SUBSTRATES; THERMAL BONDING; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSEL);

ELECTROOPTICAL DEVICES;

EID: 17044424211     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T. R. Anthony, 'Dielectric isolation of silicon by anodic bonding', J. App. Phys, august 1985, Vol. 53, No 3
2. th June 1994 Vol. 30 No 12
3. L. Bernstein 'Semiconductor joining by the solid-liquid interdiffusion (SLID) process', J. Electrochem. Soc., 113, pp1282-1288, Dec 1966
4. th June 2004 Vol. 40, No12