SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 4, 1991, Pages 2897-2909

Chemical etching of vicinal Si(111): Dependence of the surface structure and the hydrogen termination on the pH of the etching solutions

(2) Jakob, P a Chabal, Y J a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROFLUORIC ACID; INFRARED SPECTROSCOPY; SILICON; STRETCHING; SURFACE DEFECTS; SURFACE STRUCTURE;

CHEMICAL ETCHING; ETCHING SOLUTIONS; HYDROGEN TERMINATION; POLARIZED IR ABSORPTION; PREFERENTIAL ETCHING; SILICON SURFACES; STERIC HINDRANCES; STRETCHING VIBRATIONS;

ETCHING;

EID: 17044396344 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.460892 Document Type: Article

Times cited : (306)

References (41)

1
- 0014800514
- (a)
- (1970) RCA Rev. , vol.31 , pp. 187
- Kern, W.¹ Puotinen, D.A.²

2
- 84953831993
- (b)
- (1984) Semicond. Int. , vol.94
- Kern, W.¹

3
- 0022957868
- (a)
- (1986) Mat. Sci. Reports , vol.1 , pp. 65
- Grunthaner, F.J.¹ Grunthaner, P.J.²

4
- 0000703152
- (b)
- (1988) Phys. Rev. Lett. , vol.57 , pp. 249
- Yablonovitch, E.¹ Allara, D.L.² Chang, C.C.³ Gmitter, T.⁴ Bright, T.B.⁵

5
- 21544433109
- (1990) Appl. Phys. Lett. , vol.56 , pp. 656
- Higashi, G.S.¹ Chabal, Y.J.² Trucks, G.W.³ Raghavachari, K.⁴

6
- 36549099751
- (1988) Appl. Phys. Lett. , vol.53 , pp. 998
- Burrows, V.A.¹ Chabal, Y.J.² Higashi, G.S.³ Raghavachari, K.⁴ Christman, S.B.⁵

7
- 0000538963
- (a)
- (1983) Phys. Rev. B , vol.28 , pp. 4472
- Chabal, Y.J.¹ Higashi, G.S.² Christman, S.B.³

8
- 36549094322
- (1989) J. Chem. Phys. , vol.91 , pp. 7978
- Jansson, U.¹ Uram, K.J.²

9
- 33744640196
- (b)
- (1990) Surf. Sci. , vol.239 , pp. L537
- Wolff, S.H.¹ Wagner, S.² Gibson, J.M.³ Loretto, D.⁴ Robinson, I.K.⁵ Bean, J.C.⁶

10
- 0001567973
- (1990) Appl. Phys. Lett. , vol.57 , pp. 893
- Iyer, S.S.¹ Arienzo, M.² de Fresart, E.³

11
- 36549104118
- (1990) Appl. Phys. Lett. , vol.57 , pp. 1034
- Meyerson, B.S.¹ Himpsel, F.J.² Uram, K.J.³

12
- 85034882416
- (to be published)
- Eaglesham, D.J.¹ Hagashi, G.S.² Cerullo, M.³

13
- 0345303216
- (a)
- (1990) Phys. Rev. Lett. , vol.64 , pp. 2156
- Guyot-Sionnest, P.¹ Dumas, P.² Chabal, Y.J.³ Higashi, G.S.⁴

14
- 0000597344
- (b)
- (1990) Phys. Rev. Lett. , vol.65 , pp. 1124
- Dumas, P.¹ Chabal, Y.J.² Higashi, G.S.³

15
- 0000417353
- (c)
- (1990) Phys. Rev. Lett. , vol.65 , pp. 1917
- Becker, R.S.¹ Higashi, G.S.² Chabal, Y.J.³ Becker, A.J.⁴

16
- 0001120931
- (d)
- (1990) J. Electron Spectrosc. Relat. Phenom. , vol.54-55 , pp. 291
- Doak, R.B.¹ Chabal, Y.J.² Higashi, G.S.³ Dumas, P.⁴

17
- 84929177658
- (1989) J. Vac. Sci. Technol. A , vol.7 , pp. 2104
- Chabal, Y.J.¹ Higashi, G.S.² Raghavachari, K.³ Burrows, V.A.⁴

18
- 84953831991
- The dependence on pH of flat and stepped Si (100) surfaces is being studied and will be reported by P. Dumas, Y. J. Chabal, and P. Jakob (in preparation).

19
- 0001213089
- (1990) Phys. Rev. Lett. , vol.65 , pp. 504
- Trucks, G.W.¹ Raghavachari, K.² Higashi, G.S.³ Chabal, Y.J.⁴

20
- 21544460483
- (1991) Appl. Phys. Lett. , vol.58 , pp. 1656
- Higashi, G.S.¹ Becker, R.S.² Chabal, Y.J.³ Becker, A.J.⁴

21
- 0018161904
- edited by S. T. Pantelides, (Pergamon, New York)
- (1978) Physics of [formula omitted] and its Interfaces , pp. 339
- Pantelides, S.T.¹ Long, M.²

22
- 0019574354
- (1981) J. Appl. Phys. , vol.52 , pp. 4122
- Hahn, P.O.¹ Henzler, M.²

23
- 0000882976
- (1984) J. Vac. Sci. Technol. A , vol.2 , pp. 574
- Hahn, P.O.¹ Henzler, M.²

24
- 0000340525
- (1989) Appl. Phys. Lett. , vol.55 , pp. 1394
- Gibson, J.M.¹ Lanzerotti, M.Y.² Elser, V.³

25
- 0025446599
- (1990) Mater. Sci. Eng. B , vol.6 , pp. 159
- Bevk, J.¹ Feldman, L.C.² Pearsall, T.P.³ Schwartz, G.P.⁴ Ourmazd, A.⁵

26
- 0001145510
- (1991) Appl. Phys. Lett. , vol.58 , pp. 1044
- Renaud, G.¹ Fuoss, P.H.² Ourmazd, A.³ Bevk, J.⁴ Freer, B.S.⁵ Hahn, P.O.⁶

27
- 0000835573
- (1988) Surf. Sci. Rep. , vol.8 , pp. 211
- Chabal, Y.J.¹

28
- 84953831990
- Rutherford backscattering measurements show that the Shiraki oxidation produces an 8 to 9 Å thick oxide layer assuming the formation of stochiometric [formula omitted] Since the average oxygen concentration is believed to be lower than the perfect stochiometry, this thickness is a lower limit. From L. C. Feldman (private communication).

29
- 4243606272
- (a)
- (1985) Phys. Rev. B , vol.32 , pp. 3586
- Persson, B.N.J.¹ Ryberg, R.²

30
- 4243930521
- (b)
- (1987) Phys. Rev. Lett. , vol.59 , pp. 2211
- Zhang, Z.Y.¹ Langreth, D.C.²

31
- 85034887740
- (in preparation)
- Jakob, P.¹ Chabal, Y.J.² Dumas, P.³

32
- 85034885330
- As described in Ref. 13 (pp. 228–232), electronic screening is relevant in the intensity calculation of modes polarized perpendicular to the optical plane (along the z axis). The determination of [formula omitted] is, however, difficult. For H on Si (100), it has been experimentally estimated to be 1.4 [ see edited by G. LeLay, J. Derrien, and N. Boccara, Springer Proc. Phys., Vol. 22, (Springer, Berlin)
- (1987) Semiconductor Interfaces, Formation and Properties , pp. 319

33
- 0007146523
- for H on Si (111) it has been theoretically estimated to be 1.2 [see We find here that a value of 2.0 is necessary to account of the A mode on both flat and stepped surfaces. Although this is a slightly more accurate experimental determination of [formula omitted] than that for H on Si(100), the error bars are still large: 20% (i.e., [formula omitted]), due to the large distribution of the terrace lengths and the uncertainty in cutting and polishing. We note that, if the Si-H bond is, in fact, inclined with respect to the 〈111〉 axis on stepped surfaces due to interaction with steps, then a value lower than 2.0 would be needed to account for the data.
- (1990) J. Electron Spectrosc. Relat. Phenom. , vol.54-55 , pp. 1219
- Ozanam, F.¹ Chazalviel, J.-N.²

34
- 85034883459
- (in preparation)
- Jakob, P.¹ Chabal, Y.J.² Raghavachari, K.³

35
- 85034883792
- (in preparation)
- Becker, R.S.¹ Jakob, P.² Chabal, Y.J.³ Becker, A.J.⁴

36
- 84975415391
- (1967) J. Electrochem. Soc. , vol.114 , pp. 414
- Hu, S.M.¹ Kerr, D.R.²

37
- 0012040531
- (1969) Int. J. Appl. Radiat. Isot. , vol.2 , pp. 139
- Hoffmeister, W.¹

38
- 0006842371
- (1990) J. Electron Spectrosc. Relat. Phenom. , vol.54-55 , pp. 27
- Guyot-Sionnest, P.¹ Dumas, P.² Chabal, Y.J.³

39
- 0000198756
- (1991) Phys. Rev. Lett. , vol.66 , pp. 1489
- Guyot-Sionnest, P.¹

40
- 85034883978
- (in preparation)
- Morin, M.¹ Harris, A.L.² Levinos, N.³ Jakob, P.⁴ Chabal, Y.J.⁵

41
- 84899096654
- (to be published).
- Appl. Phys. Lett.
- Jakob, P.¹ Chabal, Y.J.² Raghavachari, K.³ Dumas, P.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.