Magnetotransport behaviors in electron-doped manganese oxide La 0.9Te0.1MnO3

Materials Science Forum

Volumn 475-479, Issue III, 2005, Pages 2259-2262

  Tan, Guotai ^a   Zhang, X ^b   Chen, Zhenghao ^c  

^a TSINGHUA UNIVERSITY   (China)

^b INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^c NONE

Author keywords

CMR; Electron doped; La Te Mn O

Indexed keywords

COLOSSAL MAGNETORESISTANCE; ELECTRIC RESISTANCE; LANTHANUM COMPOUNDS; MAGNETIC MATERIALS; MAGNETRON SPUTTERING; MANGANESE COMPOUNDS; METAL INSULATOR TRANSITION; PARAMAGNETISM; PHASE SEPARATION; SQUIDS; TRANSPORT PROPERTIES;

CMR; CURIE TEMPERATURE; ELECTRON-DOPED; FERROMAGNETIC STATES; LA-TE-MN-O; MAGNETOTRANSPORT BEHAVIORS; VARIABLE RANGE HOPPING MODEL (VRH);

MATERIALS SCIENCE;

EID: 17044395124     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-960-1.2259     Document Type: Conference Paper

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