Magnetoresistance and current-controlled electric transport properties of Fe-C film on Si substrate

Materials Science Forum

Volumn 475-479, Issue III, 2005, Pages 2207-2210

  Xue, Q Z ^a   Zhang, X ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Electric Transport; Film; Magnetoresistance

Indexed keywords

AMORPHOUS FILMS; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC PROPERTIES; GIANT MAGNETORESISTANCE; IRON COMPOUNDS; LASER BEAMS; PULSED LASER DEPOSITION; RANDOM ACCESS STORAGE; TRANSPORT PROPERTIES; ULTRASONICS;

ELECTRIC TRANSPORT; FILM THICKNESS; MAGNETIC RANDOM ACCESS MEMORY; THERMAL EXCITATION;

THIN FILMS;

EID: 17044388215     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-960-1.2207     Document Type: Conference Paper

References (8)

1. M. N. Baibich, J. M. Broto, A. Fert, F. Nguyen Van Dau and F. Petroff, Phys. Rev. Lett. Vol. 61 (1988), p. 2472
2. A. E. Berkowitz et al., Phys. Rev. Lett. Vol. 68 (1992), p. 3745
3. S. Jin et al., Science Vol.264 (1994), p. 413
4. R. Xu et al., Nature (London) Vol. 390 (1997), p.57
5. S. A. Solin, T. Thio and D. R. Hines, J. J. Heremans, Science Vol. 289 (2000), p. 1530
6. N. Manyala et al., Nature (London) Vol. 404 (2000), p. 581
7. H. Takeda, A. Fujita and K. Fukamichi, J. Appl. Phys. Vol. 91 (2002), p.7780
8. R.S. Markiewicz and L. A. Harris, Phys. Rev. Lett. Vol. 46 (1981), p.1149