Effects of nitrogen in HFO2 gate dielectric on the electrical and reliability characteristics by N2 plasma

Proceedings - Electrochemical Society

Volumn 4, Issue , 2004, Pages 464-469

  Kim, Jeon Ho ^a   Choi, Kyu Jeong ^a   Yoon, Soon Gil ^a  

^a Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DIELECTRIC MATERIALS; DIFFUSION IN SOLIDS; LEAKAGE CURRENTS; NITROGEN; PLASMA THEORY; POLYSILICON; RELIABILITY;

COMPATIBILITY; INTERFACE TRAPS; PLASMA TREATMENT; PRECURSORS;

GATES (TRANSISTOR);

EID: 17044380247     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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6. M. Koyama et al, Tech Digest of IEDM, p.459 (2001)
7. H. J. Cho et al, Tech. Digest IEDM, p.655 (2001)