Scaling effect on the dielectric constant in Ba(Ti x Zr 1-x )O3 thin films

Journal of Electroceramics

Volumn 13, Issue 1-3, 2004, Pages 101-104

  Hoffer, C ^a   Ellerkamnn, U ^a   Halder, S ^a   Meyer, R ^a   Waser, R ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Ba(Ti x Zr1 x )O3; Dielectric properties; Interface capacitance

Indexed keywords

BARIUM TITANATE; CAPACITANCE; DEPOSITION; ELECTRODES; INTERFACES (MATERIALS); PERMITTIVITY; SOLUTIONS;

CHEMICAL SOLUTION DEPOSITION (CSD); FILM THICKNESS; INTERFACE CAPACITANCE; PRECURSOR SOLUTIONS;

THIN FILMS;

EID: 17044372745     PISSN: 13853449     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10832-004-5083-1     Document Type: Conference Paper

References (5)

1. R. Waser, Integrated Ferroelectrics, 15, 39 (1996) and references therein.
2. J. McAneney, Journal of Applied Physics, 94(7), 4566 (2003).
3. K. Abe, Japanese Journal of Applied Physics, 33, 5297 (1994).
4. C. Hofer, Journal of the European Ceramic Society (in press).
5. U. Ellerkmann, Ferroelectrics, 271, 315 (2002).