Analyzing oxygen precipitation using the surface photovoltage technique (SPV)

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 149-154

  Moens, P ^a   Dobbelaere, W ^a   Colpaert, T ^a  

^a Alactel Mietec   (Belgium)

Author keywords

Nucleation; Oxygen Defects; Precipitation; SPV

Indexed keywords

NUCLEATION; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE PROPERTIES; TEMPERATURE; ANNEALING; CRYSTAL DEFECTS; HIGH TEMPERATURE EFFECTS; VACUUM APPLICATIONS;

HIGH TEMPERATURE; INTERNAL GETTERING; LOW TEMPERATURES; OXYGEN CONTENT; OXYGEN DEFECT; OXYGEN PRECIPITATION; RAMP UP CONDITIONS; SURFACE PHOTOVOLTAGE TECHNIQUE;

SILICON WAFERS;

INTERNAL GETTERING; OXYGEN DEFECTS; OXYGEN PRECIPITATES; SURFACE PHOTOVOLTAGE TECHNIQUE (SPV);

EID: 16944365894     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.149     Document Type: Article

References (8)

1. L. Jastrzebski, J. Electrochem. Soc., 131, 2944 (1984).
2. L. Jastrzebski, R. Soydan, J. McGinn, R. Kleppinger, M. Blumenfeld, G. Gillespie, N. Armour, B. Goldsmith, W. Henry and S. Vecrumba, J. Electrochem. Soc., 134, 1018 (1987).
3. F.F. Villa and L. Paciaroni, in "Symposium on High Voltage and Smart Power IC's", edited by M. Ayman Shibbib, The Electrochemical Society, pennington, NJ (1989).
4. J. O. Borland, Semiconductor Int., May, 147 (1989).
5. A. Borghesi, B. Pivac, A. Sassella and A. Stella, Appl. Phys. Rev., 77, 4169 (1995).
6. J.C. Mikkelsen Jr, in "Oxygen, Carbon, Hydrogen and Nitrogen in Silicon", edited by J.C. Mikkelsen Jr., S.J. Pearton, J.W. Corbett and S.J. Pennycook (Materials Research Society, Princeton, NJ, 1986).
7. N. Inoue, K. Watanabe, K. Wada and J. Osaka, J. Cryst. Growth, 84, 21 (1987).
8. L. Jastrzebski, R. Soydan, B. Goldsmith and J. McGinn, J. Electrochem. Soc., 131, 2948 (1984).