Collapse of the quantum Hall state by floating-up of extended-state bands with increasing disorder

Surface Science

Volumn 361-362, Issue , 1996, Pages 278-281

  Okamoto, Tohru ^a   Shinohara, Yoshinori ^a   Kawaji, Shinji ^a   Yagi, Atsuo ^b  

^a GAKUSHUIN UNIVERSITY   (Japan)

^b NPC Ltd   (Japan)

Author keywords

Anderson localization; Electrical transport; Electrical transport measurements; Hall effect; Quantum effects; Semiconductor insulator interfaces; Silicon

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC VARIABLES MEASUREMENT; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; INTERFACES (MATERIALS); MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTING SILICON;

ANDERSON LOCALIZATION; FILLING FACTORS; INSULATING STATE; INTEGER QUANTUM HALL EFFECT;

ELECTRON ENERGY LEVELS;

EID: 16744363058     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00402-5     Document Type: Article

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