The growth and characterization of two new P-type compressively strained layer InGaAs/AlGaAs/GaAs quantum well infrared photodetectors for mid- and long-wavelength infrared detection

Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 964-970

  Chu, J ^a   Li, Sheng S ^a   Ho, Pin ^b  

^a University of Florida   (United States)

^b Lockheed Martin Company   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES;

FULL WIDTH AT HALF MAXIMUM (FWHM);

INFRARED DETECTORS;

EID: 16744361884     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01237-7     Document Type: Article

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