Batch derivation of piezoresistive coefficient tensor by matrix algebra

Journal of Micromechanics and Microengineering

Volumn 14, Issue 3, 2004, Pages 332-334

  Bao, Minhang ^a   Huang, Yiping ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARTESIAN COORDINATES; PIEZORESISTIVE (PR) EFFECTS;

CRYSTALLINE MATERIALS; DIAMONDS; ELECTRIC CONDUCTIVITY; GERMANIUM; MATHEMATICAL TRANSFORMATIONS; MATRIX ALGEBRA; MICROELECTROMECHANICAL DEVICES; RESISTORS; SILICON; TENSORS;

PIEZOELECTRICITY;

EID: 1642634568     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/14/3/003     Document Type: Article

References (4)

1. Smith C S 1954 Piezoresistance effect in germanium and silicon Phys. Rev. 94 42-9
2. Smith C S 1958 Macroscopic symmetry and properties of crystals Solid State Physics, Advance in Research and Applications vol 6, ed F Seitz and D Turnbull (New York: Academic) pp 175-249
3. Bao M-H 2000 Micro mechanical transducers Handbook of Sensors and Actuators vol 8, ed S Middelhoek (Amsterdam: Elsevier) chapter 5
4. Pfann W G and Thurston R N 1961 Semiconducting stress transducers utilizing the transverse and shear piezoresistance effects J. Appl. Phys. 32 2008-19