Lifetime control by Fe doping in n-type silicon

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 273-275

  Nishizawa, J ^a   Sasaki, T ^a  

^a SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

Deep level; Fe; Lifetime killer; PHCAP

Indexed keywords

CAPACITANCE; DIODES; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; EVAPORATION; GOLD; IRON; LIGHTING; MONOCHROMATORS; SEMICONDUCTOR DOPING; THERMODYNAMIC STABILITY;

DEEP LEVEL; LIFETIME KILLER; PHCAP;

SILICON WAFERS;

EID: 1642634115     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.07.025     Document Type: Conference Paper

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