Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Materials Science in Semiconductor Processing

Volumn 6, Issue 5-6, 2003, Pages 421-424

  Ohno, Takeo ^a   Oyama, Yutaka ^a,b   Suto, Ken ^a,b   Nishizawa, Jun Ichi ^b  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

Author keywords

Be doping; GaAs; Molecular layer epitaxy; Surface reaction; Surface stoichiometry

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON TRANSITIONS; EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; STOICHIOMETRY; SURFACE REACTIONS; VACUUM APPLICATIONS;

BE-DOPING; MOLECULAR LAYER EPITAXY (MLE); SURFACE STOICHIOMETRY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 1642602991     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2003.08.015     Document Type: Article

References (8)

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