Efficient 3D mesh adaptation in diffusion simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 1996, Pages 171-172

  Chen, T ^a   Yergeau, D W ^a   Dutton, R W ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; SEMICONDUCTOR DEVICES;

2D MESHES; 3D MESHES; GRID GENERATION; GRID POINTS; MESH ADAPTATION; MESH GENERATION ALGORITHM;

MESH GENERATION;

EID: 1642587935     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.1996.865324     Document Type: Conference Paper

References (5)

1. C. Lin, M. Law, "2-D Adaptive Simulation of Dopant Implantation and Diffusion", Proc. SISPAD I, 1995.
2. C. Lin, M. Law, R. Lowther, "Automatic Grid Refinement and Higher Order Flux Discretizations of Diffusion Modeling", IEEE Trans. Computer-Aided Design, vol. 12, p.1209, August 1993.
3. R. Ismail, G. Amaratunga, "Adaptive Meshing Schemes for Simulating Dopant Diffusion", IEEE Trans. Computer-Aided Design, vol. 9, p.276, March 1990.
4. D. Yergeau, R. Dutton, R. Goossens, "A General OO-PDE Solver for TCAD Applications", Proc. OONSKI 94.
5. T. Chen, J. Johnson, R. Dutton, "A Vector Level Control Function for Generalized Octree Mesh Generation", Proc. SISPAD I, 1995.