Doped silicon and NIS junctions for bolometer applications

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 520, Issue 1-3, 2004, Pages 44-47

  Leoni, Roberto ^a   Buonomo, Bruno ^a   Castellano, Gabriella ^a   Mattioli, Francesco ^a   Torrioli, Guido ^a   Di Gaspare, Luciana ^b   Evangelisti, Florestano ^b  

^a IFN CNR   (Italy)

^b INFM   (Italy)

Author keywords

Micro bolometer; NIS junction; Schottky barrier; Semiconductor superconductor contact

Indexed keywords

BOLOMETERS; ELECTRODES; ELECTRONS; EVAPORATION; PHONONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS; SUPERCONDUCTING MATERIALS; THERMOMETERS;

MICROBOLOMETERS; NIS JUNCTIONS; SEMICONDUCTOR-SUPERCONDUCTOR CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 1642587773     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.216     Document Type: Conference Paper

References (3)

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2. Leoni R., Buonomo B., castellano M.G., Mattioli F., Simeone D., Torrioli G., Carelli P. J. Appl. Phys. 93:2003;3572.
3. Savin A.M., Prunila M., Kivienen P.P., Pekola J.P., Ahopelto J., Manninen A.J. Appl. Phys. Lett. 79:2001;1471.