Application of Electron-beam Induced Processes to Mask Repair

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5130, Issue , 2003, Pages 383-390

  Edinger, Klaus ^a   Boegli, Volker ^a   Budach, Michael ^a   Hoinkis, Ottmar ^a   Weyrauch, Bernd ^a   Koops, Hans W P ^a   Bihr, Johannes ^b   Greiser, Jens ^b  

^a NaWoTec GmbH   (Germany)

^b LEO GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABERRATIONS; ATOMIC FORCE MICROSCOPY; DEFECTS; DEPOSITION; ELECTRON BEAMS; ETCHING; ION BEAMS; ION IMPLANTATION; LIGHT TRANSMISSION; LITHOGRAPHY; SIGNAL TO NOISE RATIO; SILICA; SILICON CARBIDE; TANTALUM COMPOUNDS;

FOCUSED ION BEAMS (FIB); NEXT GENERATION LITHOGRAPHY (NGL); OPAQUE DEFECTS; PHOTO MASK REPAIR TOOL (PMRT);

MASKS;

EID: 1642555643     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.504061     Document Type: Conference Paper

References (3)

1. Ted Liang, A. Stivers, G. Liu, G. Dao, V. Liberman, M. Rothschild, S.T. Palmacci and L. Scipioni, "Damage-free Mask Repair Using Electron Beam Induced Chemical Reactions", 2nd Int'l. Symp.on 157nm Lithography, Dana Point, CA (May 2001).
2. SII presentation at LEEPL Forum, at SEMICON Japan 2003, Tokyo Japan
3. P. Gnauck « A new high resolution field emission SEM with variable pressure capabilities» Proc. EUREM, 2000 BRNO, CZ