Photoelectron spectroscopic investigations of very thin a-Si:H layers

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 125-130

  Schmidt, M ^a   Schoepke, A ^a   Milch, O ^a   Lussky, Th ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); FERMI LEVEL; HETEROJUNCTIONS; PASSIVATION; PHOTONS; SILANES; SILICON WAFERS; SUBSTRATES; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION CHAMBERS; GAP STATE DENSITY;

AMORPHOUS SILICON;

EID: 1642541277     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a19.11     Document Type: Conference Paper

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