Post-transit Analysis of Transient Photocurrents from High-Deposition-Rate a-Si:H Samples

Materials Research Society Symposium - Proceedings

Volumn 762, Issue , 2003, Pages 99-104

  Brinza, Monica ^a   Kessel, W M M ^b   Smets, Arno H M ^b   Van de Sanden, M C M ^b   Adriaenssens, Guy J ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CARRIER MOBILITY; DIELECTRIC RELAXATION; ELECTRIC CHARGE; ELECTRIC POTENTIAL; HYDROGENATION; LEAKAGE CURRENTS; PHOTOCURRENTS; SUBSTRATES;

ELECTRON AFFINITY; THERMAL PLASMA;

AMORPHOUS SILICON;

EID: 1642541276     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-762-a19.6     Document Type: Conference Paper

References (6)

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