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Applied Physics Letters

Volumn 60, Issue 24, 1992, Pages 2989-2991

Radiation-induced E' centers in H2-annealed oxide films

(3) Zvanut, M E a Stahlbush, R E a Carlos, W E a

a NAVAL RESEARCH LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 1642516448 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.106785 Document Type: Article

Times cited : (18)

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- Free-radical energies: SiH, 3.0 eV; [formula omitted] 4.5 eV. Although the absolute values will differ in [formula omitted] the relative strengths should be the same. The Si—Si bond in [formula omitted] is estimated to be approximately 2.2 eV [W. B. Fowler (private communication)]

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