Thermoelectric Characteristics of Si/Ge Superlattice Thin Films at Temperatures Less than 300 K

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 11, 2003, Pages 6779-6783

  Hamabe, Makoto ^a   Takahashi, Hideaki ^a   Yamaguchi, Satarou ^a   Komine, Takashi ^b   Eura, Takashi ^b   Okumura, Haruhiko ^c   Okamoto, Yoichi ^d   Morimoto, Jun ^d  

^a CHUBU UNIVERSITY   (Japan)

^b Ion Eng Res Institute Corporation   (Japan)

^c Mie Chukyo University   (Japan)

^d NATIONAL DEFENSE ACADEMY   (Japan)

Author keywords

Hall effect; Magnetic field effect; Seebeck effect; Superlattice; Thermoelectrics

Indexed keywords

CARRIER MOBILITY; CRYOSTATS; CRYSTAL IMPURITIES; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; HALL EFFECT; MAGNETIC FIELD EFFECTS; PHONONS; SEMICONDUCTOR SUPERLATTICES; SILICON ALLOYS; SUPERCONDUCTING MATERIALS; THERMAL CONDUCTIVITY; THERMOELECTRICITY;

QUANTUM-WELL; THERMOELECTRIC POWER; TRANSPORT COEFFICIENTS;

THIN FILMS;

EID: 1642495707     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6779     Document Type: Article

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