High-Speed High-Saturation-Current InP/In 0.53Ga 0.47As Photodiode with Partially Depleted Absorber

Conference on Optical Fiber Communication, Technical Digest Series

Volumn 86, Issue , 2003, Pages 338-339

  Li, X ^a   Li, N ^a   Zheng, X ^a   Demiguel, S ^a   Campbell, J ^a   Tulchinsky, D ^b   Williams, K ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OPTICAL RESPONSE; PARTIALLY DEPLETED ABSORBERS (PDA); HIGH SATURATION CURRENT; HIGH SPEED; INDIUM GALLIUM ARSENIDE; INGAAS PHOTODIODES; INP; PARTIALLY DEPLETED; RESPONSIVITY;

BANDWIDTH; CHEMICAL VAPOR DEPOSITION; CONTINUOUS WAVE LASERS; ELECTRIC CURRENTS; ELECTRIC FIELDS; PHOTOCURRENTS; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SIGNAL PROCESSING; THERMAL CONDUCTIVITY; GALLIUM ARSENIDE; GALLIUM PHOSPHIDE; INDIUM; INDIUM PHOSPHIDE; OPTICAL FIBERS; OPTICAL SIGNAL PROCESSING; PHOTODIODES; SPECTROSCOPY; TEMPERATURE CONTROL; WAVELENGTH DIVISION MULTIPLEXING; ZINC;

PHOTODIODES; OPTICAL FIBER COMMUNICATION;

EID: 1642465557     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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