The effects of annealing on the structures and electrical conductivities of fullerene-derived nanowires

Journal of Materials Chemistry

Volumn , Issue , 2004, Pages 914-918

  Guo, Yu Guo ^a,d   Wan, Li Jun ^a   Li, Cong Ju ^a,d   Chen, Dong Min ^b   Wang, Chen ^a   Wang, Chun Ru ^a   Bai, Chun Li ^a   Wang, Yan Guo ^c  

^a INSTITUTE OF CHEMISTRY   (China)

^b HARVARD UNIVERSITY   (United States)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

^d UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ANODES; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTROPHORESIS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; POLYMERIZATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

ALUMINUM OXIDE; CARBON; FULLERENE DERIVATIVE;

ABSORPTION SPECTROSCOPY; ARTICLE; ARTIFICIAL MEMBRANE; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD; ELECTRIC RESISTANCE; ELECTROPHORESIS; INFRARED SPECTROSCOPY; METHODOLOGY; NANOPARTICLE; PARTICLE SIZE; POLYMERIZATION; POROSITY; SEMICONDUCTOR; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 1642401213     PISSN: 09599428     EISSN: 13645501     Source Type: Journal    
DOI: 10.1039/b311449j     Document Type: Article

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